AOD5B60D 600v, 5a alpha igbt tm with diode general description product summary v ce i c (t c =100c) 5a v ce(sat) (t c =25c) 1.55v symbol v ce the alpha igbt tm line of products offers best-in-class performance in conduction and switching losses, wit h robust short circuit capability. they are designed for ease of paralleling, minimal gate spike under high dv/dt conditions and resistance to oscillations. the soft co- package diode is targeted for minimal losses in mot or control applications. v units parameter absolute maximum ratings t a =25c unless otherwise noted AOD5B60D 600v collector-emitter voltage 600 g c e AOD5B60D top view to252 dpak bottom view c g g e c e ce v ge i cm i lm diode pulsed current, limited by t jmax i fm t sc t j , t stg t l symbol r q ja r q jc r q jc c/w 3 maximum diode junction-to-case c/w 2.3 maximum igbt junction-to-case maximum junction-to-ambient 10 m s t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d short circuit withstanding time v ge = 15v, v ce 400v, delay between short circuits 1.0s, t c =150c junction and storage temperature range t c =25c thermal characteristics 300 -55 to 150 54.4 20 c/w 55 21.7 c 20 AOD5B60D pulsed collector current, limited by t jmax gate-emitter voltage t c =100c w units a a parameter 20 v 20 a a continuous diode forward current t c =25c i f 10 a t c =100c continuous collector current t c =25c 5 10 5 i c turn off soa, v ce 600v, limited by t jmax g c e AOD5B60D top view to252 dpak bottom view c g g e c e rev1: nov 2012 www.aosmd.com page 1 of 9
AOD5B60D symbol min typ max units bv ces collector-emitter breakdown voltage 600 - - v t j =25c - 1.55 1.8 t j =125c - 1.78 - t j =150c - 1.85 - t j =25c - 1.46 1.75 t j =125c - 1.36 - t j =150c - 1.3 - v ge(th) gate-emitter threshold voltage - 6 - v t j =25c - - 10 t j =125c - - 100 t j =150c - - 500 i ges gate-emitter leakage current - - 100 na g fs - 2.3 - s c ies - 367 - pf c oes - 34 - pf c res - 1.47 - pf q g - 9.4 - nc q ge - 3.15 - nc q gc - 6.25 - nc i c(sc) - 21 - a r g - 3 - w t d(on) - 12 - ns t r - 15 - ns collector-emitter saturation voltage output capacitance input capacitance i ces zero gate voltage collector current v f diode forward voltage dynamic parameters m a v ce =v ge , i c =1ma electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =5a v ce =0v, v ge =20v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =5a v v ce =600v, v ge =0v v ge =0v, i c =5a v gate to collector charge gate to emitter charge v ge =15v, v ce =480v, i c =5a switching parameters, (load inductive, t j =25c) short circuit collector current, max. 1000 short circuits, delay between short circuits 1.0s v ge =15v, v ce =400v, r g =60 w total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz turn-on rise time turn-on delay time t j =25c t r - 15 - ns t d(off) - 82 - ns t f - 10 - ns e on - 0.14 - mj e off - 0.04 - mj e total - 0.18 - mj t rr - 98 - ns q rr - 0.23 - m c i rm - 4.4 - a t d(on) - 11 - ns t r - 16 - ns t d(off) - 110 - ns t f - 14 - ns e on - 0.18 - mj e off - 0.08 - mj e total - 0.26 - mj t rr - 166 - ns q rr - 0.4 - m c i rm - 5.2 - a this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-off energy turn-on rise time switching parameters, (load inductive, t j =150c) diode reverse recovery time diode reverse recovery charge diode peak reverse recovery current t j =25c i f =5a,di/dt=200a/ m s,v ce =400v turn-off delay time t j =25c v ge =15v, v ce =400v, i c =5a, r g =60 w, parasitic i nductance=75nh total switching energy turn-off fall time turn-on energy t j =150c i f =5a,di/dt=200a/ m s,v ce =400v diode reverse recovery charge diode peak reverse recovery current turn-on delaytime t j =150c v ge =15v, v ce =400v, i c =5a, r g =60 w, parasitic inductance = 75nh turn-on rise time turn-off delay time turn-off fall time turn-on energy diode reverse recovery time turn-off energy total switching energy rev1: nov 2012 www.aosmd.com page 2 of 9
AOD5B60D typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) v f (v) fig 4: diode characteristic 25 c 150 c -40 c 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 1: output characteristic (t j =25c ) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 5 10 15 20 4 7 10 13 16 i c (a) v ge (v) fig 3: transfer characteristic 150 c 25 c -40 c v ce =20v 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 2: output characteristic (t j =150c ) v ge =7v 9v 20v 17 v 15v 11v 13v 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) v f (v) fig 4: diode characteristic 25 c 150 c -40 c 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 1: output characteristic (t j =25c ) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 5 10 15 20 4 7 10 13 16 i c (a) v ge (v) fig 3: transfer characteristic 150 c 25 c -40 c 0 1 2 3 4 0 25 50 75 100 125 150 v ce(sat) (v) temperature (c) fig 5: collector-emitter saturation voltage vs. junction temperature i c =10a i c =2.5a i c =5a 0 5 10 15 20 25 30 0 10 20 30 40 50 60 5 8 11 14 17 20 current(a) time ( m mm m s) v ge (v) fig 6: v ge vs. short circuit time (v ce =400v,t c =25c ) v ce =20v 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 2: output characteristic (t j =150c ) v ge =7v 9v 20v 17 v 15v 11v 13v rev1: nov 2012 www.aosmd.com page 3 of 9
AOD5B60D typical electrical and thermal characteristics 1 10 100 10 100 1,000 i c (a) v ce (v) fig 10: reverse bias soa (t j =150c,v ge =15v) 0 3 6 9 12 15 0 2 4 6 8 10 i c (a) q g (nc) fig 7: gate-charge characteristics v ce =480v i c =5a 1 10 100 1000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) fig 8: capacitance characteristic c ies c res c oes 1 10 100 10 100 1,000 i c (a) v ce (v) fig 10: reverse bias soa (t j =150c,v ge =15v) 0 3 6 9 12 15 0 2 4 6 8 10 i c (a) q g (nc) fig 7: gate-charge characteristics v ce =480v i c =5a 0 10 20 30 40 50 60 25 50 75 100 125 150 power disspation (w) t case (c) fig 11: power disspation as a function of case 1 10 100 1000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) fig 8: capacitance characteristic c ies c res c oes 0 2 4 6 8 10 25 50 75 100 125 150 current rating i c (a) t case (c) fig 12: current de-rating rev1: nov 2012 www.aosmd.com page 4 of 9
AOD5B60D typical electrical and thermal characteristics 1 10 100 1000 0 3 6 9 12 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 w ww w ) td(off) tf td(on) tr 1 10 100 1,000 10,000 0 100 200 300 400 500 600 switching time (ns) r g ( w ww w ) figure 14: switching time vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) td(off) tf td(on) tr 1 10 100 1000 0 50 100 150 200 switching time (ns) t j (c) figure 15: switching time vs.t j ( v ge = 15 v,v ce = 400 v,i c = 5 a,r g = 60 w ww w ) td(off) tf td(on) tr 0 2 4 6 8 10 0 30 60 90 120 150 v ge(th) (v) t j (c) figure 16: v ge(th) vs. t j 1 10 100 1000 0 3 6 9 12 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 w ww w ) td(off) tf td(on) tr 1 10 100 1,000 10,000 0 100 200 300 400 500 600 switching time (ns) r g ( w ww w ) figure 14: switching time vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) td(off) tf td(on) tr 1 10 100 1000 0 50 100 150 200 switching time (ns) t j (c) figure 15: switching time vs.t j ( v ge =15v,v ce =400v,i c =5a,r g =60 w ww w ) td(off) tf td(on) tr 0 2 4 6 8 10 0 30 60 90 120 150 v ge(th) (v) t j (c) figure 16: v ge(th) vs. t j rev1: nov 2012 www.aosmd.com page 5 of 9
AOD5B60D typical electrical and thermal characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0 3 6 9 12 e,switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 w ww w ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 switching energy (mj) r g ( w ww w ) figure 18: switching loss vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) eoff eon etotal 0 0.1 0.2 0.3 0.4 0 25 50 75 100 125 150 175 switching energy (mj) t j ( c) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 200 250 300 350 400 450 500 switching energ y (mj) v (v) eoff eon etotal 0 0.1 0.2 0.3 0.4 0.5 0.6 0 3 6 9 12 e,switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 w ww w ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 switching energy (mj) r g ( w ww w ) figure 18: switching loss vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) eoff eon etotal 0 0.1 0.2 0.3 0.4 0 25 50 75 100 125 150 175 switching energy (mj) t j (c) figure 19: switching loss vs. t j (v ge =15v,v ce =400v,i c =5a,r g =60 w ww w ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 200 250 300 350 400 450 500 switching energ y (mj) v ce (v) figure 20: switching loss vs. v ce (t j =150c,v ge =15v,i c =5a,r g =60 w ww w ) eoff eon etotal rev1: nov 2012 www.aosmd.com page 6 of 9
AOD5B60D typical electrical and thermal characteristics 0 3 6 9 12 15 18 0 50 100 150 200 250 300 0 3 6 9 12 s t rr (ns) i s (a) fig 24: diode reverse recovery time and softness factor vs. conduction current (v ge = 15 v,v ce = 400 v, di/dt= 200 a/ m mm m s) 150 c 25 c 150 c 25 c t rr s 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 600 700 800 0 3 6 9 12 i rm (a) q rr (nc) i f (a) fig 23: diode reverse recovery charge and peak current vs. conduction current (v ge = 15 v,v ce = 400 v, di/dt= 200 a/ m mm m s) 25 c 150 c 150 c 25 c q rr i rm 13v 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 0 25 50 75 100 125 150 175 i ce(s) (a) temperature (c ) fig 21: reverse leakage current vs. junction temperature v ce =600v v ce =400v 0.2 0.7 1.2 1.7 2.2 0 25 50 75 100 125 150 175 v sd (v) temperature (c ) fig 22: diode forward voltage vs. junction temperature 15a 10a 5a if=1a 0 3 6 9 12 15 18 0 50 100 150 200 250 300 0 3 6 9 12 s t rr (ns) i s (a) fig 24: diode reverse recovery time and softness factor vs. conduction current (v ge =15v,v ce =400v, di/dt=200a/ m mm m s) 150 c 25 c 150 c 25 c t rr s 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 600 700 800 0 3 6 9 12 i rm (a) q rr (nc) i f (a) fig 23: diode reverse recovery charge and peak current vs. conduction current (v ge =15v,v ce =400v, di/dt=200a/ m mm m s) 25 c 150 c 150 c 25 c q rr i rm 13v 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 0 25 50 75 100 125 150 175 i ce(s) (a) temperature (c ) fig 21: reverse leakage current vs. junction temperature v ce =600v v ce =400v 0.2 0.7 1.2 1.7 2.2 0 25 50 75 100 125 150 175 v sd (v) temperature (c ) fig 22: diode forward voltage vs. junction temperature 15a 10a 5a if=1a 0 4 8 12 16 20 0 40 80 120 160 200 100 200 300 400 500 600 700 800 900 s t rr (ns) di/dt (a/ m mm m s) fig 26: diode reverse recovery time and softness factor vs. di/dt (v ge =15v,v ce =400v,i f =5a) 25 c 150 c 25 c 150 c t rr s 0 10 20 30 40 50 60 0 100 200 300 400 500 600 100 200 300 400 500 600 700 800 900 i rm (a) q rr (nc) di/dt (a/ m mm m s) fig 25: diode reverse recovery charge and peak current vs. di/dt (v ge =15v,v ce =400v,i f =5a) 150 c 25 c 150 c 25 c q rr i rm rev1: nov 2012 www.aosmd.com page 7 of 9
AOD5B60D typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 27: normalized maximum transient thermal impe dance for igbt d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 28: normalized maximum transient thermal impe dance for diode d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 27: normalized maximum transient thermal impe dance for igbt d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 28: normalized maximum transient thermal impe dance for diode d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev1: nov 2012 www.aosmd.com page 8 of 9
AOD5B60D rev1: nov 2012 www.aosmd.com page 9 of 9
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